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    參數(shù)資料
    型號: NT5DS64M4AW-75B
    廠商: Electronic Theatre Controls, Inc.
    英文描述: 256Mb Double Data Rate SDRAM
    中文描述: 256MB雙數(shù)據(jù)速率SDRAM
    文件頁數(shù): 37/78頁
    文件大小: 1534K
    代理商: NT5DS64M4AW-75B
    NT5DS64M4AT NT5DS64M4AW
    NT5DS32M8AT NT5DS32M8AW
    256Mb Double Data Rate SDRAM
    REV 1.1
    12/2001
    37
    NANYA TECHNOLOGY CORP
    . All rights reserved.
    NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
    Write to Read: Interrupting (CAS Latency = 2; Burst Length = 8)
    T1
    T2
    T3
    T4
    T5
    T6
    t
    DQSS
    (max)
    Maximum D
    QSS
    NOP
    NOP
    NOP
    Read
    Write
    NOP
    DI a-b = data in for bank a, column b.
    An interrupted burst is shown, 4 data elements are written.
    3 subsequent elements of data in are applied in the programmed order following DI a-b.
    t
    WTR
    is referenced from the first positive CK edge after the last data in pair.
    The Read command masks the last 2 data elements in the burst.
    A10 is Low with the Write command (Auto Precharge is disabled).
    The Read and Write commands are not necessarily to the same bank.
    1 = These bits are incorrectly written into the memory array if DM is low.
    DIa- b
    CK
    CK
    Command
    Address
    DQS
    DQ
    DM
    Don’t Care
    BAa, COL b
    BAa, COL n
    t
    WTR
    CL = 2
    T1
    T2
    T3
    T4
    T5
    T6
    Minimum D
    QSS
    NOP
    NOP
    NOP
    Read
    Write
    NOP
    CK
    CK
    Command
    Address
    BAa, COL b
    BAa, COL n
    t
    WTR
    DI a-b
    DQS
    DQ
    DM
    CL = 2
    t
    DQSS
    (min)
    1
    1
    1
    1
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