參數(shù)資料
型號(hào): NSR0230M2T5G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diode(肖特基勢壘二極管)
中文描述: 0.2 A, 30 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, MINIATURE, PLASTIC, CASE 509AA-01, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 41K
代理商: NSR0230M2T5G
Semiconductor Components Industries, LLC, 2006
March, 2006 Rev. 0
1
Publication Order Number:
NSR0230/D
NSR0230M2T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for highspeed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for handheld and portable
applications where space is limited.
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.325 V (max) @ I
F
= 10 mA
Low Reverse Current
This is a PbFree Device
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current DC
I
F
200
mA
Forward Current Surge Peak
(60 Hz, 1 cycle)
I
FSM
1.0
A
ESD Rating: Class 3B per Human Body Model
ESD Rating:
Class C per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
200
2.0
mW
mW/
°
C
Thermal Resistance, JunctiontoAmbient
R
JA
600
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to
+125
°
C
1. FR5 Minimum Pad.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V
R
= 10 V)
I
R
10
A
Forward Voltage
(I
F
= 10 mA)
(I
F
= 200 mA)
V
F
0.325
0.500
Vdc
30 V SCHOTTKY
BARRIER DIODE
Device
Package
Shipping
ORDERING INFORMATION
NSR0230M2T5G
SOD723
2 mm Pitch
8000/Tape & Reel
1
CATHODE
2
ANODE
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOD723
CASE 509AA
PLASTIC
7C = Specific Device Code
M
= Month Code
= PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
7C M
1
2
1
2
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參數(shù)描述
NSR0230P2T5G 功能描述:肖特基二極管與整流器 SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
NSR0230P2T5G_09 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Schottky Barrier Diode
NSR0230P2T5H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
NSR023D 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Schottky Barrier Diode
NSR0240HT1G 功能描述:肖特基二極管與整流器 SCHTY BARRIER DIO RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel