參數(shù)資料
型號(hào): NSR0320MW2T3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Schottky Barrier Diodes
中文描述: 1 A, SILICON, SIGNAL DIODE
封裝: CASE 477-02, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 44K
代理商: NSR0320MW2T3
Semiconductor Components Industries, LLC, 2005
October, 2005 Rev. 1
Publication Order Number:
NSR0320MW2T1/D
NSR0320MW2T1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
Features
Low Forward Voltage 0.24 Volts (Typ) @ I
F
= 10 mAdc
High Current Capability
ESD Rating Human Body Model: CLASS 3B
Machine Model: C
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 125
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
20
Vdc
Peak Revese Voltage
V
RM
23
V
Forward Power Dissipation
@ T
A
= 25
°
C
Derate above 25
°
C
P
F
200
2.0
mW
mW/
°
C
Forward Current (DC)
Continuous
I
F
1
A
Forward Current
t = 8.3 ms Half Sinewave
I
F
5
A
Junction Temperature
T
J
125 Max
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
RD = Specific Device Code
M
= Date Code
= PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1
CATHODE
2
ANODE
Device
Package
Shipping
ORDERING INFORMATION
NSR0320MW2T1
SOD323
3000/Tape & Reel
SOD323
CASE 477
STYLE 1
http://onsemi.com
M
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NSR0320MW2T1G SOD323
(PbFree)
3000/Tape & Reel
NSR0320MW2T3G SOD323
(PbFree)
10,000/Tape & Reel
1
2
RD M
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