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參數(shù)資料
| 型號： | NSQA6V8AW5T2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Quad Array for ESD Protection |
| 中文描述： | 20 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, CASE 419A-02, SC-70, SC-88A, 5 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | NSQA6V8AW5T2G |
NSQA6V8AW5T2 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Power Dissipation
8
20 sec Double Exponential Waveform (Note 1)
P
PK
20
W
Steady State Power 1 Diode (Note 2)
P
D
380
mW
Thermal Resistance
JunctiontoAmbient
Above 25
°
C, Derate
R
JA
327
3.05
°
C/W
mW/
°
C
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Lead Solder Temperature Maximum 10 Seconds Duration
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR4 board with min pad.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
NSQA6V8AW5T2
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage (I
T
= 1 mA) (Note 3)
V
BR
6.4
6.8
7.1
V
Leakage Current (V
RWM
= 5.0 V)
I
R
1.0
A
Clamping Voltage 1 (I
PP
= 1.6 A, 8
20 sec Waveform)
V
C
13
V
Maximum Peak Pulse Current (8
20 sec Waveform)
I
PP
1.6
A
Junction Capacitance (V
R
= 0 V, f = 1 MHz)
(V
R
= 3.0 V, f = 1 MHz)
C
J
12
6.7
15
9.5
pF
NSQA12VAW5T2
Breakdown Voltage (I
T
= 5 mA) (Note 3)
V
BR
11.4
12.0
12.7
V
Leakage Current (V
RWM
= 9.0 V)
I
R
0.05
A
Zener Impedence (I
T
= 5 mA)
Z
Z
30
Clamping Voltage 1 (I
PP
= 0.9 A, 8
20 sec Waveform)
V
C
23
V
Maximum Peak Pulse Current (8
20 sec Waveform)
I
PP
0.9
A
Junction Capacitance (V
R
= 0 V, f = 1 MHz)
3. V
BR
is measured at pulse test current I
T
.
C
J
15
pF
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