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參數(shù)資料
| 型號： | NSQA6V8AW5T2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Capacitance Quad Array for ESD Protection |
| 中文描述： | 20 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | CASE 419A-02, SC-70, SC-88A, 5 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | NSQA6V8AW5T2 |
NSQA6V8AW5T2 Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Power Dissipation
8
20 sec Double Exponential Waveform (Note 1)
P
PK
20
W
Steady State Power 1 Diode (Note 2)
P
D
380
mW
Thermal Resistance
JunctiontoAmbient
Above 25
°
C, Derate
R
JA
327
3.05
°
C/W
mW/
°
C
Operating Junction Temperature Range
T
J
40 to +125
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Lead Solder Temperature Maximum 10 Seconds Duration
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR4 board with min pad.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
NSQA6V8AW5T2
Characteristic
Symbol
Min
Typ
Max
Unit
Breakdown Voltage (I
T
= 1 mA) (Note 3)
V
BR
6.4
6.8
7.1
V
Leakage Current (V
RWM
= 5.0 V)
I
R
1.0
A
Clamping Voltage 1 (I
PP
= 1.6 A, 8
20 sec Waveform)
V
C
13
V
Maximum Peak Pulse Current (8
20 sec Waveform)
I
PP
1.6
A
Junction Capacitance (V
R
= 0 V, f = 1 MHz)
(V
R
= 3.0 V, f = 1 MHz)
C
J
12
6.7
15
9.5
pF
NSQA12VAW5T2
Breakdown Voltage (I
T
= 5 mA) (Note 3)
V
BR
11.4
12.0
12.7
V
Leakage Current (V
RWM
= 9.0 V)
I
R
0.05
A
Zener Impedence (I
T
= 5 mA)
Z
Z
30
Clamping Voltage 1 (I
PP
= 0.9 A, 8
20 sec Waveform)
V
C
23
V
Maximum Peak Pulse Current (8
20 sec Waveform)
I
PP
0.9
A
Junction Capacitance (V
R
= 0 V, f = 1 MHz)
3. V
BR
is measured at pulse test current I
T
.
C
J
15
pF
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NSQA6V8AW5T2/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low Capacitance TVS Quad Array for ESD Protection |
| NSQA6V8AW5T2_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection |
| NSQA6V8AW5T2_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage |
| NSQA6V8AW5T2G | 功能描述:TVS二極管陣列 Low Cap. TVS Quad Array for ESD RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NSQAU040 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:DP83848J PHYTER Mini LS Commercial Temperature Single Port 10/100 Mb/s Ethernet Transceiver |
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