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參數(shù)資料
| 型號： | NNCD18ST-T1-AT |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 85 W, BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, SUPER MINIMOLD, SC-70, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 210K |
| 代理商： | NNCD18ST-T1-AT |
Data Sheet D18881EJ1V0DS
2
NNCD6.8ST to NNCD36ST
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Breakdown Voltage
VBR (V)
Note
Reverse Leakage
IR (
μA)
Capacitance
Ct (pF)
ESD Voltage
(kV)
Type Number
MIN.
MAX.
IZ (mA)
MAX.
VR (V)
TYP.
Condition
MIN.
Condition
NNCD6.8ST
6
8
5
0.5
3.5
50
30
NNCD18ST
16
20
5
0.1
12
15
30
NNCD27ST
25
31
2
0.1
21
11
20
NNCD36ST
33
39
2
0.1
27
9
VR = 0 V,
f = 1 MHz
15
C = 150 pF,
R = 330
Ω
Note VBR is tested with pulse (40 ms).
TYPICAL CHARACTERISTICS (TA = 25
°C)
Figure 1. POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
-
P
ower
Dis
sipation
-
mW
0
50
100
150
200
250
0
25
50
75
100
125
150
P.C.B. (Glass Epoxy)
(50 mm x 50 mm x 1.6 mmt)
TA - Ambient Temperature -
°C
Figure 2. IT - VBR CHARACTERISTICS
I
T-
O
n-state
Current
-
mA
0.0001
0.001
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
45
NNCD36ST
NNCD27ST
NNCD18ST
NNCD6.8ST
VBR - Breakdown Voltage - V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NNCD2.0DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
| NNCD2.2DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
| NNCD2.4DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
| NNCD2.7DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
| NNCD20DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
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