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參數(shù)資料
| 型號： | NM27C256QE90 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
| 中文描述： | 262,144位（32K的× 8）高性能CMOS存儲器 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 125K |
| 代理商： | NM27C256QE90 |
4
www.fairchildsemi.com
N
AC Test Conditions
Output Load
1 TTL Gate and CL = 100 pF (Note 8)
Input Rise and Fall Times
≤
5 ns
Input Pulse Levels
0.45 to 2.4V
Timing Measurement Reference Level (Note 10)
Inputs
Outputs
0.8V and 2.0V
0.8V and 2.0V
AC Waveforms
(Note 6) (Note 7) (Note 9)
Note 1:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
- t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
and t
compare level is determined as follows:
High to TRI-STATE
, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE.
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
μ
F ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
TTL Gate: I
= 1.6 mA, I
= -400
μ
A.
C
L
= 100 pF includes fixture capacitance.
Note 9:
V
PP
may be connected to V
CC
except during programming.
Note 10:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Note 11:
CMOS inputs: V
IL
= GND
±
0.3V, V
IH
= V
CC
±
0.3V.
Programming Characteristics
(Note 12) (Note 13) (Note 14) (Note 15)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ADDRESSES VALID
VALID OUTPUT
Hi-Z
Hi-Z
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
ADDRESSES
CE
OE
OUTPUT
t
(NOE
t
(NACC
t
CE
t
(NotCE
t
OH
t
(Notes 4, 5)
DS010833-4
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| NM27C256V120 | 功能描述:IC OTP 256KBIT 120NS 32PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應商設備封裝:8-DFN（2x3） 包裝:管件 產品目錄頁面:1445 (CN2011-ZH PDF) |
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