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參數(shù)資料
| 型號(hào)： | NM27C256QE90 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
| 中文描述： | 262,144位（32K的× 8）高性能CMOS存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | NM27C256QE90 |
3
www.fairchildsemi.com
N
Absolute Maximum Ratings
(Note 1)
Storage Temperature
-65
°
C to +150
°
C
All Input Voltages except A9 with
Respect to Ground
-0.6V to +7V
V
PP
and A9 with Respect
to Ground
-0.7V to +14V
V
CC
Supply Voltage with
Respect to Ground
-0.6V to +7V
ESD Protection
> 2000V
All Output Voltages with
Respect to Ground
V
CC
+ 1.0V to GND -0.6V
Operating Range
Range
Temperature
V
CC
Comm’l
0
°
C to +70
°
C
+5V
±
10%
Industrial
-40
°
C to +85
°
C
+5V
±
10%
Read Operation
DC Electrical Characteristics
Over Operating Range with V
PP
= V
CC
Symbol
Parameter
Test Conditions
Min
Max
Units
V
IL
Input Low Level
-0.5
0.8
V
V
IH
Input High Level
2.0
V
CC
+1
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.4
V
V
OH
Output High Voltage
I
OH
= -2.5 mA
CE = V
CC
±
0.3V
3.5
V
I
V
Standby Current
(CMOS)
100
μ
A
(Note 11)
I
SB2
V
CC
Standby Current (TTL)
CE = V
IH
1
mA
I
CC1
V
CC
Active Current
TTL Inputs
CE = OE = V
IL
,f=5 MHz
Inputs = V
IH
or V
IL
, I/O = 0 mA
35
mA
I
PP
V
PP
Supply Current
V
PP
= V
CC
10
μ
A
V
PP
V
PP
Read Voltage
V
CC
- 0.7
V
CC
V
I
LI
Input Load Current
V
IN
= 5.5V or GND
-1
1
μ
A
I
LO
Output Leakage Current
V
OUT
= 5.5V or GND
-10
10
μ
A
AC Electrical Characteristics
Over Operating Range with V
PP
= V
CC
Symbol
Parameter
90
100
120
150
200
Units
Min Max Min Max Min Max Min Max Min Max
t
ACC
Address to Output Delay
90
100
120
150
200
ns
t
CE
CE to Output Delay
90
100
120
150
200
t
OE
OE to Output Delay
35
50
50
50
50
t
Output Disable to
Output Float
30
30
35
45
45
(Note 2)
t
OH
Output Hold from
Addresses,
CE or OE, Whichever
Occurred First
0
0
0
0
0
(Note 2)
Capacitance
(Note 2) T
A
= +25C, f = 1 MHz
Symbol
Parameter
Conditions
Typ Max
Units
C
IN
Input Capacitance
V
IN
= 0V
6
12
pF
C
OUT
Output Capacitance
V
OUT
= 0V
9
12
pF
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