VCC (V)
參數(shù)資料
型號: NLU2G07BMX1TCG
廠商: ON Semiconductor
文件頁數(shù): 4/10頁
文件大小: 0K
描述: IC BUFF DL OP/DRAIN N-INV 6ULLGA
標準包裝: 3,000
邏輯類型: 緩沖器/線路驅(qū)動器,非反相
元件數(shù): 2
每個元件的位元數(shù): 1
電源電壓: 1.65 V ~ 5.5 V
工作溫度: -55°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-XFLGA
供應商設備封裝: 6-ULLGA(1.2x1)
包裝: 帶卷 (TR)
NLU2G07
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VCC
(V)
TA = 25 5C
TA = +855C
TA = 555C to
+1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
LowLevel
Input Voltage
1.65
0.75 x
VCC
0.75 x
VCC
V
2.3 to
5.5
0.70 x
VCC
0.70 x
VCC
VIL
LowLevel
Input Voltage
1.65
0.25 x
VCC
0.25 x
VCC
0.25 x
VCC
V
2.3 to
5.5
0.30 x
VCC
0.30 x
VCC
0.30 x
VCC
VOL
LowLevel
Output Voltage
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
ILKG
ZState
Output
Leakage
Current
VIN = VIH,
VOUT = VCC or
GND
5.5
±0.25
±2.5
±5.0
mA
IIN
Input Leakage
Current
0 v VIN v 5.5 V
0 to
5.5
±0.1
±1.0
mA
IOFF
Power Off
Input Leakage
Current
0 v VIN,
VOUT v 5.5 V
0
0.25
2.5
5.0
mA
ICC
Quiescent
Supply Current
0 v VIN v VCC
5.5
1.0
10
40
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 nS)
Symbol
Parameter
VCC
(V)
Test
Condition
TA = 25 5C
TA = +855C
TA = 555C
to +1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPZL
Propagation Delay,
Input A to Output Y
3.0 to 3.6
RL = R1 = 50 W
CL = 15 pF
5.0
7.1
8.5
10
ns
RL = R1 = 50 W
CL = 50 pF
7.5
10.6
12
14.5
4.5 to 5.5
RL = R1 = 50 W
CL = 15 pF
3.8
5.5
6.5
8.0
RL = R1 = 50 W
CL = 50 pF
5.3
7.5
8.5
10
tPLZ
Output Disable Time
3.0 to 3.6
RL = R1 = 50 W
CL = 50 pF
7.5
10.6
12
14.5
ns
4.5 to 55
RL = R1 = 50 W
CL = 50 pF
5.3
7.5
8.5
10
CIN
Input Capacitance
4.0
10
pF
CPD
Power Dissipation
Capacitance (Note 3)
5.0
18
pF
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
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