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參數(shù)資料
| 型號(hào)： | NLAST9431MTR2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 多路復(fù)用及模擬開(kāi)關(guān) |
| 英文描述： | Low Voltage Single Supply Dual DPDT Analog Switch |
| 中文描述： | DUAL 2-CHANNEL, DBL POLE DBL THROW SWITCH, QCC16 |
| 封裝： | LEAD FREE, WQFN-16 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 107K |
| 代理商： | NLAST9431MTR2G |
NLAST9431
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
V
IS
55 C to 25 C
85 C
125 C
Symbol
Parameter
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
t
ON
TurnOn Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
35
24
16
14
5
5
2
2
38
27
19
17
5
5
2
2
41
30
22
20
ns
t
OFF
TurnOff Time
(Figures 12 and 13)
R
L
= 300
(Figures 5 and 6)
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
6
5
1
1
1
1
15
13
9
8
1
1
1
1
18
16
12
11
ns
t
BBM
Minimum BreakBeforeMake
Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300
C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25
°
C.
Typical @ 25, VCC = 5.0 V
C
IN
C
NO
or
C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (Switch Off)
Common I/O (Switch Off)
Feedthrough (Switch On)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
V
Typical
Symbol
Parameter
Condition
25 C
Unit
BW
Maximum OnChannel
Minimum Frequency Response
(Figure 11)
3 dB Bandwidth or
V
IN
=
0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
145
170
175
MHz
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
3
3
3
dB
V
ISO
OffChannel Isolation
(Figure 10)
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
93
93
93
dB
Q
Charge Injection Select Input to Common I/O
(Figure 15)
V
IN =
V
CC
to GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0 , C
L
= 1000 pF
Q = C
L
* V
OUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
THD
Total Harmonic Distortion
THD
Noise
(Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 ,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave
5.5
0.1
%
VCT
Channel to Channel Crosstalk
f = 100 kHz; V
IS
=
1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
5.5
3.0
90
90
dB
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