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參數(shù)資料
| 型號： | NLAS325USG |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC SWITCH DUAL SPST US8 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 功能： | 開關(guān) |
| 電路： | 2 x SPST - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 30 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.2 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-VFSOP（0.091"，2.30mm 寬） |
| 供應(yīng)商設(shè)備封裝： | US8 |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | NLAS325USGOSCT |
NLAS325
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
*0.5 to )7.0
V
VI
DC Input Voltage
*0.5 to )7.0
V
VO
DC Output Voltage
*0.5 to )7.0
V
IIK
DC Input Diode Current
VI < GND
*50
mA
IOK
DC Output Diode Current
VO < GND
*50
mA
IO
DC Output Sink Current
$50
mA
ICC
DC Supply Current per Supply Pin
$100
mA
IGND
DC Ground Current per Ground Pin
$100
mA
TSTG
Storage Temperature Range
*65 to )150
°C
TL
Lead Temperature, 1.0 mm from Case for 10 Seconds
260
°C
TJ
Junction Temperature under Bias
)150
°C
qJA
Thermal Resistance (Note 1)
250
°C/W
PD
Power Dissipation in Still Air at 85
°C
250
mW
MSL
Moisture Sensitivity
Level 1
FR
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V0 @ 0.125 in
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 200
N/A
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2ounce copper trace with no air flow.
2. Tested to EIA/JESD22A114A.
3. Tested to EIA/JESD22A115A.
4. Tested to JESD22C101A.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
Digital Select Input Voltage
GND
5.5
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
*55
)125
°C
tr, tf
Input Rise or Fall Time, SELECT
VCC = 3.3 V $ 0.3 V
VCC = 5.0 V $ 0.5 V
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
NORMALIZED
F
AILURE
RA
TE
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time Junction Temperature
TIME, YEARS
T
J=
1
3
0°
C
T
J=
1
2
0°
C
T
J=
1
0°
C
T
J=
1
0
0°
C
T
J=
9
0°
C
T
J=
8
0°
C
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