參數(shù)資料
型號: NJ1800D
廠商: InterFET Corporation
英文描述: Silicon Junction Field-Effect Transistor
中文描述: 硅結(jié)場效應(yīng)晶體管
文件頁數(shù): 1/2頁
文件大?。?/td> 129K
代理商: NJ1800D
At 25°C free air temperature:
NJ1800D Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
– 20
– 30
– 30
V
pA
mA
V
I
G
= – 1 μA, V
DS
= V
V
GS
= – 10V, V
DS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, I
D
= 1 nA
– 100
1000
– 7
50
– 0.1
Dynamic Electrical Characteristics
Forward Transconductance (Pulsed)
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
g
fs
r
ds(on)
C
iss
C
rss
350
mS
pF
pF
V
DS
= 10V, V
GS
= V
I
D
= 1 mA, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
2
7
100
50
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.052" X 0.052"
All Bond Pads
0.004" Sq.
Substrate is also Gate.
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