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參數(shù)資料
| 型號(hào)： | NJ26 |
| 廠商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | NJ26 |
At 25°C free air temperature:
NJ26 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
– 30
– 40
– 10
V
pA
mA
V
I
G
= – 1 μA, V
DS
= V
V
GS
= – 20V, V
DS
= V
V
DS
= 15V, V
GS
= V
V
DS
= 15V, I
D
= 1 nA
– 100
22
– 5
2
– 1
Dynamic Electrical Characteristics
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
g
fs
C
iss
C
rss
ˉ
N
6
mS
pF
pF
V
DS
= 15V, V
GS
= V
V
DS
= 15V, V
GS
= V
V
DS
= 15V, V
GS
= V
nV/
√
HZ V
DS
= 10V, I
D
= 5 mA
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
4.3
1
4
5.0
1.5
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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PDF描述 |
|---|---|
| NJ30L | Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier |
| NJ30 | Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier |
| NJ32 | Silicon Junction Field-Effect Transistor General Purpose Amplifier |
| NJ3600L | Silicon Junction Field-Effect Transistor Large Capacitance Detector Pre-Amplifier |
| NJ36D | Silicon Junction Field-Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NJ2-6.5-40-E0 | 制造商:PEPPERL+FUCHS 功能描述:Inductive DC |
| NJ26A | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Silicon Junction Field-Effect Transistor |
| NJ26C11192 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ26C11195 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ26C11792 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
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