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參數(shù)資料
| 型號： | NJ132 |
| 廠商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅結(jié)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 129K |
| 代理商： | NJ132 |
2N4393
2N4856, 2N4857
2N4858, 2N4859
2N4391, 2N4392
2N4856A, 2N4857A
2N4858A, 2N4859A
IFN113
2SK113
At 25°C free air temperature:
NJ132 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
– 30
– 45
– 10
V
pA
mA
V
I
G
= – 1 μA, V
DS
= V
V
GS
= – 20V, V
DS
= V
V
DS
= 20V, V
GS
= V
V
DS
= 20V, I
D
= 1 nA
– 100
150
– 7
10
– 0.5
Dynamic Electrical Characteristics
Drain Source ON Resistance
Input Capacitance
Feedback Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
r
ds(on)
C
iss
C
iss
t
d(on)
t
r
t
d(off)
25
12
2.5
6
5
50
pF
pF
ns
ns
ns
I
D
= 1 mA, V
GSS
= V
V
DS
= 20V, V
GS
= V
V
DS
= V, V
GS
= – 10V
V
DD
= – 10V, I
D
= 10 mA
R
L
= 10V, V
GS(ON)
= V
V
GS(OFF)
= – 6V
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.022" X 0.022"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| NJ132L | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Silicon Junction Field-Effect Transistor Low-Noise Amplifier |
| NJ14126 | 制造商:Thomas & Betts 功能描述: |
| NJ14AL | 制造商:INTERFET 制造商全稱:INTERFET 功能描述:Silicon Junction Field-Effect Transistor |
| NJ15+U1+A2-T | 制造商:PEPPERL+FUCHS 功能描述:High temperature sensor,PNP 15mm limit |
| NJ15+U1+DW2-1 | 制造商:PEPPERL+FUCHS 功能描述:Sensor, Proximity, Inductive, Speed Monitor, 15mm Range, 90-250VAC, NO, 015951 |
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