參數(shù)資料
型號(hào): NJ01
廠商: InterFET Corporation
英文描述: Silicon Junction Field-Effect Transistor
中文描述: 硅結(jié)場(chǎng)效應(yīng)晶體管
文件頁數(shù): 1/2頁
文件大小: 127K
代理商: NJ01
2N4117, 2N4117A
2N4118, 2N4118A
2N4119, 2N4119A
IFN421, IFN422
IFN423, IFN424
IFN425, IFN426
DPAD1, DPAD2
PAD1, PAD2
PAD5
VCR7N
At 25°C free air temperature:
NJ01 Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
(BR)GSS
I
GSS
V
GS(OFF)
I
DSS
– 40
– 50
– 0.5
V
pA
V
mA
I
G
= – 1 μA, V
DS
= V
V
GS
= – 20V, V
DS
= V
V
DS
= 10V, I
D
= 1 μA
V
DS
= 10V, V
GS
= V
– 10
– 6
0.6
– 0.5
0.03
Dynamic Electrical Characteristics
Common Source Forward Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
g
fs
C
iss
175
2
0.9
μS
pF
pF
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
f = 1 kHz
f = 1 MHz
f = 1 MHz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.016" X 0.016"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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