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參數(shù)資料
| 型號： | NH1302A |
| 廠商： | Motorola, Inc. |
| 英文描述： | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS |
| 中文描述： | 15安培互補(bǔ)性的芯片功率晶體管200伏250瓦 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 221K |
| 代理商： | NH1302A |
1
Motorola Bipolar Power Transistor Device Data
"
!
The MJ3281A and MJ1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 sec
High fT — 30 MHz Typical
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
VCEX
IC
200
Vdc
Collector–Base Voltage
200
Vdc
Emitter–Base Voltage
7
Vdc
Collector–Emitter Voltage — 1.5 V
200
Vdc
Collector Current — Continuous
Collector Current
— Peak (1)
15
25
Adc
Base Current — Continuous
IB
PD
1.5
Adc
Total Power Dissipation @ TC = 25
°
C
Derate Above 25
°
C
250
1.43
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ3281A/D
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
250 WATTS
CASE 1–07
TO–204AA
(TO–3)
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