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參數(shù)資料
| 型號： | NID5001NT4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Self−Protected FET with Temperature and Current Limit |
| 中文描述： | 42 V, 0.034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NID5001NT4G |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 8
1
Publication Order Number:
NID5001N/D
NID5001N
SelfProtected FET
with Temperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible onresistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated DraintoGate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
GatetoSource Clamp.
Features
Low R
DS(on)
Current Limitation
Thermal Shutdown with Automatic Restart
Short Circuit Protection
I
DSS
Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
PbFree Package is Available
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage Internally Clamped
V
DSS
42
Vdc
DraintoGate Voltage Internally Clamped
(R
GS
= 1.0 M )
V
DGR
42
Vdc
GatetoSource Voltage
V
GS
14
Vdc
Drain Current Continuous
I
D
Internally Limited
Total Power Dissipation
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 1)
@ T
A
= 25
°
C (Note 2)
P
D
64
1.0
1.56
W
Thermal Resistance, JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JC
R
JA
R
JA
1.95
120
80
°
C/W
Single Pulse DraintoSource Avalanche
Energy
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 4.5 Apk, L = 120 mH, R
G
= 25 )
E
AS
1215
mJ
Operating and Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR4 PCB, steady state.
2. Mounted onto a 2
″
square FR4 board
(1
″
square, 2 oz. Cu 0.06
″
thick singlesided, t = steady state).
T
J
, T
stg
55 to 150
°
C
Device
Package
Shipping
ORDERING INFORMATION
NID5001NT4
DPAK
2500/Tape & Reel
DPAK
CASE 369C
STYLE 2
M
PWR
Drain
Source
Temperature
Limit
Gate
Input
MARKING
DIAGRAM
Y
WW
D5001N = Device Code
G
= PbFree Package
= Year
= Work Week
Current
Limit
Current
Sense
R
G
Overvoltage
Protection
ESD Protection
http://onsemi.com
YWW
D50
01NG
*Max current may be limited below this value
depending on input conditions.
1
2
3
= Gate
= Drain
= Source
1
2
3
V
DSS
(Clamped)
R
DS(ON)
TYP
23 m @ 10 V
I
D
MAX
(Limited)
42 V
33 A*
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NID5001NT4G
DPAK
(PbFree)
2500/Tape & Reel
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