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參數(shù)資料
| 型號(hào)： | NGP8203N |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Ignition IGBT(點(diǎn)火IGBT) |
| 中文描述： | 20 A, 440 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, TO-220, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 144K |
| 代理商： | NGP8203N |
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 1
1
Publication Order Number:
NGP8203N/D
NGP8203N
Ignition IGBT
20 A, 400 V, N
Channel TO
220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil
on
Plug and Driver
on
Coil Applications
Gate
Emitter ESD Protection
Temperature Compensated Gate
Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (R
G
) and Gate
Emitter Resistor (R
GE
)
Applications
Ignition Systems
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector
Emitter Voltage
V
CES
440
V
Collector
Gate Voltage
V
CER
440
V
Gate
Emitter Voltage
V
GE
15
V
Collector Current
Continuous
@ T
C
= 25
°
C
Pulsed
I
C
20
50
A
DC
A
AC
Continuous Gate Current
I
G
1.0
mA
Transient Gate Current (t
≤
2 ms, f
≤
100 Hz)
I
G
20
mA
ESD (Charged
Device Model)
ESD
2.0
kV
ESD (Human Body Model)
R = 1500 , C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 , C = 200 pF
ESD
500
V
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
150
1.0
Watts
W/
°
C
Operating & Storage Temperature Range
T
J
, T
stg
55 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
20 AMPS
400 VOLTS
V
CE(on)
= 1.3 V @
I
C
= 10 A, V
GE
4.5 V
C
E
G
TO
220
CASE 221A
STYLE 9
Device
Package
Shipping
ORDERING INFORMATION
NGP8203N
TO
220
50 Units / Rail
MARKING
DIAGRAM
NGP8203N= Device Code
Y
= Year
WW
= Work Week
NGP
8203N
YWW
http://onsemi.com
R
GE
R
G
1
G C E
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