參數(shù)資料
型號: NEZ5964-8DD
廠商: NEC Corp.
英文描述: 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
中文描述: 4W/8W C波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管
文件頁數(shù): 5/18頁
文件大小: 108K
代理商: NEZ5964-8DD
5
4W/8W C-BAND Power-GaAs FET NEZ Series
TYPICAL CHARACTERISTICS
(T
A
= 25 C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
P
T
0
110
T
C
- Case Temperature - C
OUTPUT POWER vs. INPUT POWER
P
out
(dBm)
P
in
- Input Power - dBm
100
90
80
70
60
50
40
30
20
10
0
25
50
75
100 125 150 175 200
–8D/–8DD
–4D/–4DD
Infinite Heat sink
P
out
I
D
35
30
25
I
D
(A)
2
1
0
EFF
(%)
15
20
25
50
40
30
20
10
0
EFF
NEZ3642-4D
Test Conditions:
Freq = 3.9 (GHz),
V
DS
= 10.0 (V), I
DS
= 0.8 (A),
P
out
: P
in
= 27.0 (dBm),
G
L
: P
in
= 20.0 (dBm),
R
g
= 200 (
)
Test Conditions:
Freq = 3.9 (GHz),
V
DS
= 10.0 (V), I
DS
= 1.6 (A),
P
out
: P
in
= 31.0 (dBm),
G
L
: P
in
= 20.0 (dBm),
R
g
= 100 (
)
20
40
P
in
- Input Power - dBm
35
30
25
P
out
(dBm)
I
D
(A)
3
2
1
0
EFF
(%)
50
40
30
20
10
0
P
out
I
D
EFF
25
30
OUTPUT POWER vs. INPUT POWER
P
out
(dBm)
15
P
in
- Input Power - dBm
35
30
25
I
D
(A)
3
2
1
0
EFF
(%)
20
25
30
50
40
30
20
10
0
OUTPUT POWER vs. INPUT POWER
P
out
I
D
EFF
NEZ3642-8D/8DD
NEZ4450-4D/4DD
Test Conditions:
Freq = 4.7 (GHz), V
DS
= 10.0 (V),
I
D
= 0.80 A, R
g
= 200
相關(guān)PDF資料
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NEZ4450-8D 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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