參數(shù)資料
型號: NEZ4450-8DD
廠商: NEC Corp.
英文描述: VARISTOR, 275VAC; Series:VE; Voltage rating, AC:275V; Suppressor type:Varistors; Voltage rating, DC:350V; Current, Peak Pulse IPP @ 8/20uS:4500A; Voltage, clamping 8/20us max:710V; Energy, transient 10/1000us max:71J; RoHS Compliant: Yes
中文描述: 4W/8W C波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管
文件頁數(shù): 2/18頁
文件大?。?/td> 108K
代理商: NEZ4450-8DD
2
4W/8W C-BAND POWER-GaAs FET NEZ Series
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
NEZ-4D, 4DD
NEZ-8D, 8DD
Drain to Source Voltage
V
DS
15
15
V
Gate to Source Voltage
V
GS
– 12
–12
V
Gate to Drain Voltage
V
GD
– 18
– 18
V
Drain Current
I
D
4.5
9.0
A
Gate Current
I
G
25
50
mA
Total Power Dissipation
P
T
*
25
50
W
Channel Temperature
Tch
175
175
C
Storage Temperature
T
stg
– 65 to + 175
– 65 to + 175
C
*
T
C
= 25 C
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
Part No.
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Saturated Drain Current
I
DSS
NEZ-4D
1.0
2.3
3.5
A
V
DS
= 2.5 V, V
GS
= 0 V
NEZ-8D, 8DD
2.0
4.5
7.0
Pinch-off Voltage
V
P
NEZ-4D, 4DD
– 3.5
– 2.0
– 0.5
V
V
DS
= 2.5 V, I
DS
= 15 mA
NEZ-8D, 8DD
– 3.5
– 2.0
– 0.5
V
DS
= 2.5 V, I
DS
= 30 mA
Trans-Conductance
g
m
NEZ-4D, 4DD
1300
mS
V
DS
= 2.5 V, I
DS
= 1 A
NEZ-8D, 8DD
2600
V
DS
= 2.5 V, I
DS
= 2 A
Gate to Drain Voltage
B
VGD0
NEZ-4D, 4DD
20
22
V
I
GD
= 15 mA
NEZ-8D, 8DD
20
22
I
GD
= 30 mA
Thermal Resistance
R
th
NEZ-4D, 4DD
5.0
6.0
C/W
Channel to Case
NEZ-8D, 8DD
2.5
3.0
相關(guān)PDF資料
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