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參數(shù)資料
| 型號(hào)： | NESG210719 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| 中文描述： | 鄰舍npn型硅鍺晶體管低噪聲，高增益放大 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | NESG210719 |
NESG210719
NEC's NPN SiGe TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
California Eastern Laboratories
IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION
APPLICATIONS
HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR
SiGe TRANSISTOR
3-PIN SUPER MINIMOLD (19) PACKAGE
FEATURES
PRELIMINARY DATA SHEET
ORDERING INFORMATION
Remark
To order evaluation samples, contact your nearby sales of
fi
ce.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25oC)
Note
Mounted on 1.08 cm
2
×
1.0 mm (t) glass epoxy PCB
Caution
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG210719
50 pcs (Non reel)
8 mm wide embossed taping
NESG210719-T1
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
13.0
V
Collector to Emitter Voltage
V
CEO
5.0
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
tot
Note
200
mW
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG210719-A | 功能描述:射頻硅鍺晶體管 NPN Amp/Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG210719-T1 | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| NESG210719-T1-A | 功能描述:射頻硅鍺晶體管 NPN Amp/Oscillator RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2107M33 | 制造商:CEL 制造商全稱(chēng):CEL 功能描述:NECs NPN SILICON TRANSISTOR |
| NESG2107M33(A) | 制造商:Renesas Electronics Corporation 功能描述: |
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