參數(shù)資料
型號(hào)： NESG260234
廠商： NEC Corp.
英文描述： 3-PIN POWER MINIMOLD
中文描述： 3 - Pin電源MINIMOLD
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 252K
代理商： NESG260234
NESG260234
NEC's NPN SiGe RF TRANSISTOR
FOR MEDIUM OUTPUT POWER
AMPLIFICATION (1 W)
3-PIN POWER MINIMOLD (34 PACKAGE)
California Eastern Laboratories
THIS PRODUCT IS SUITABLE FOR
MEDIUM OUTPUT POWER (1 W) AMPLIFICATION
P
O
= 30 dBm TYP. @ V
CE
= 6 V, P
in
= 15 dBm, f = 460 MHz
P
O
= 30 dBm TYP. @ V
CE
= 6 V, P
in
= 20 dBm, f = 900 MHz
MAXIMUM STABLE GAIN:
MSG
= 23 dB TYP @ V
CE
= 6 V, I
C
= 100 mA, f = 460 MHz
SiGe TECHNOLOGY:
UHS2-HV process
ABSOLUTE MAXIMUM RATINGS:
V
CBO
= 25 V
3-PIN POWER MINIMOLD (34 PACKAGE)
FEATURES
ORDERING INFORMATION
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25oC)
Note
Mounted on 34.2 cm
2
×
0.8 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER
ORDER NUMBER
PACKAGE
QUANTITY
SUPPLYING FORM
NESG260234
NESG260234-AZ
3-pin power minimold
(Pb-Free)
Note1
25 pcs (Non reel)
Magazine case
NESG260234-T1
NESG260234-T1-AZ
1 kpcs/reel
12 mm wide embossed taping
Pin 2 (Emitter) face the perforation side of the tape
Notes 1.
Contains Lead in the part except the electrode terminals.
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
9.2
V
Emitter to Base Voltage
V
EBO
2.8
V
Collector Current
I
C
600
mA
Total Power Dissipation
P
tot
Note
1.9
W
Junction Temperature
T
j
150
°
C
Storage Temperature
T
stg
65 to +150
°
C
相關(guān)PDF資料
PDF描述
NESG260234-T1 3-PIN POWER MINIMOLD
NESG3031M14 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG3031M05 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG3031M05-T1 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG3031M14-T3 NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
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NESG260234-T1 制造商:NEC 制造商全稱:NEC 功能描述:3-PIN POWER MINIMOLD
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