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參數(shù)資料
| 型號(hào)： | NESG204619-T1-A |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION |
| 中文描述： | 鄰舍npn型硅鍺晶體管低噪聲，高增益放大 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | NESG204619-T1-A |
NESG204619
PACKAGE DIMENSIONS
3-PIN SUPER MINIMOLD (19 PACKAGE)
(UNIT: mm)
0
0
0
0
+
-
1
1
0
0
0
+
-
1.6±0.1
0.8±0.1
0
+
-
1
2
3
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
T
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
09/09/2004
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2046M33 | 制造商:CEL 制造商全稱:CEL 功能描述:NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION |
| NESG2046M33(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NESG2046M33-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2046M33-T3-A | 功能描述:射頻硅鍺晶體管 NPN Silicn Germanium Amp/Oscilltr RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| NESG2101M05 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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