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參數資料
| 型號： | NES1823P-140 |
| 廠商： | NEC Corp. |
| 英文描述： | 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET |
| 中文描述： | 140冊，S波段推拉功率GaAs場效應晶體管 |
| 文件頁數： | 1/20頁 |
| 文件大小： | 154K |
| 代理商： | NES1823P-140 |
The information in this document is subject to change without notice.
N-CHANNEL GaAs MESFET
NES1823P-100
100W L-BAND PUSH-PULL POWER GaAs MESFET
1998
Document No. P13839EJ1V0DS00 (1st edition)
Date Published November 1998 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
DESCRIPTION
The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for
IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear
gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.
The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride
passivation for superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
Push-pull type N-channel GaAs MESFET
High Output Power
High Linear Gain
High Drain Efficiency: 50 % TYP. @V
DS
= 10 V, I
Dset
= 6 A, f = 2.2 GHz
: 100 W TYP.
: 11.0 dB TYP.
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NES1823P-100
T-92
ESD protective envelope
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NES1823P-100)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
15
V
Gate to Source Voltage
V
GSO
–7
V
Drain Current
I
D
76
A
Gate Current
I
G
440
mA
Total Power Dissipation
P
T
220
Note
W
Channel Temperature
T
ch
175
°C
Storage Temperature
T
stg
–65 to +175
°C
Note
T
C
= 25°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
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