參數(shù)資料
型號: NEL2012F03-24
廠商: NEC Corp.
英文描述: NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
中文描述: NPN硅外延晶體管L波段脈沖功率放大器
文件頁數(shù): 2/12頁
文件大小: 108K
代理商: NEL2012F03-24
2
NEL2012F03-24
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
PARAMETERS
SYMBOL
Specified Condition
RATINGS
UNIT
Collector to Base Voltage
V
CBO
45
V
Collector to Emitter Voltage
V
CER
R = 10
:
30
V
Emitter to Base Voltage
V
EBO
3
V
Collector to Emitter Voltage
V
CEO
18
V
Collector Current
I
C
4
A
Total Power Dissipation
P
T
41.5
W
Thermal Resistance
R
th (j-c)
4.2
°C/W
Junction Temperature
T
j
200
°C
Storage Temperature
T
stg
e
65 to +150
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
PARAMETERS
SYMBOL
Specified Condition
MIN.
TYP.
MAX.
UNIT
Collector to Emitter Cutoff Current
I
CES
V
CE
= 24 V
8
mA
Collector to Emitter Voltage
V
CER
I
C
= 8 mA, R = 10
:
30
85
V
Collector to Emitter Voltage
V
CEO
I
C
= 8 mA
18
22
V
Collector to Base Voltage
V
CEO
I
C
= 8 mA
45
85
V
Emitter to Base Voltage
V
EBO
I
C
= 20 mA
3
4.4
V
DC Current Gain
h
FE
V
CE
= 5 V, I
C
= 0.8 A
30
100
150
Output Capacitance
Cob
V
CE
= 24 V, freq = 1 MHz
12.6
pF
PERFORMANCE SPECIFICATIONS (T
A
= 25 °C)
CLASS AB OPERATION (Unless otherwise specified, freq = 1.97 GHz, V
CC
= 24 V, Iq = 75 mA)
PARAMETERS
SYMBOL
Specified Condition
MIN.
TYP.
MAX.
UNIT
Output Power
P
1dB
12
16
W
Collector Efficiency
K
C
Pout = P
1dB
40
55
%
Linear Gain
G
L
Pin = 0.5 W
10.9
dB
3rd Order Intermodulation
IM
3
'
freq = 100 kHz, 12 W PEP
e
33
dBc
CLASS A OPERATION (Unless otherwise specified, freq = 1.97 GHz, V
CC
= 20 V, Iq = 750 mA)
PARAMETERS
SYMBOL
Specified Condition
MIN.
TYP.
MAX.
UNIT
Output Power
P
1dB
5
W
Collector Efficiency
K
C
Pout = P
1dB
35
%
Linear Gain
G
L
Pin = 0.07 W
13.8
dB
3rd Order Intermodulation
IM
3
'
freq = 100 kHz, 2.5 W PEP
e
35
dBc
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