參數(shù)資料
型號: NE97833-T1
廠商: NEC Corp.
英文描述: PNP SILICON HIGH FREQUENCY TRANSISTOR
中文描述: 進步黨硅高頻晶體管
文件頁數(shù): 3/5頁
文件大?。?/td> 43K
代理商: NE97833-T1
V
IN
= 1 v, V
BB
= -0.5 V, R
C1
= R
C2
R
S
(
)
R
C
(
)
R
L1
(
)
R
L2
(
)
R
E
(
)
V
EE
(V)
V
CC
(V)
160
1 K
200
250
2.7 K
27
26.3
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE97833
DC CURRENT GAIN
VS.
COLLECTOR CURRENT
NOISE FIGURE
VS.
COLLECTOR CURRENT
D
F
Collector Current, I
C
(mA)
N
Collector Current, I
C
(mA)
V
IN
R
S
V
OUT
R
L1
R
C1
R
C2
R
L2
V
BB
(-)
50
V
CC
(-)
V
EE
(+)
R
E
Sampling
Oscilloscope
V
OUT
V
IN
20 ns
t
OFF
(delay)
t
ON
(delay)
t
r
t
f
t
ON
(delay)
Turn-on Delay Time
ns
1.10
t
r
Rise Time
ns
0.77
t
OFF
(delay)
Turn-off Delay Time
ns
0.40
t
f
Fall Time
ns
0.79
SWITCHING CHARACTERISTICS
SWITCHING TIME MEASUREMENT CIRCUIT
V
IN
= 1 V
TYP
UNITS
PARAMETERS
UNITS
-0.1
-1.0
-10
-100
-1000
1.0
10
100
V
CE
= -10 V
V
CE
= 10 V
f = 1 GHz
6
4
2
0
1
10
100
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