參數(shù)資料
型號: NE8500199
廠商: NEC Corp.
英文描述: 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
中文描述: 1瓦C波段砷化鎵場效應管N溝道砷化鎵場效應晶體管
文件頁數(shù): 5/6頁
文件大?。?/td> 41K
代理商: NE8500199
NE85001 SERIES
5
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300
±
10 C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
相關PDF資料
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NE8500200-WB 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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相關代理商/技術參數(shù)
參數(shù)描述
NE85002 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE85002_02 制造商:NEC 制造商全稱:NEC 功能描述:2 WATT C-BAND POWER GaAs MESFET
NE8500200 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200-RG 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200-WB 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET