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參數(shù)資料
| 型號(hào)： | NE76184A-T1A |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| 中文描述： | 一般用途場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NE76184A-T1A |
NE76184A
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(IEI-1207).
Soldering
process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230 C or below,
Reflow time: 30 seconds or below (210 C or higher),
Number of reflow process: 1, Exposure limit
*
: None
IR30-00
Partial heating method
Terminal temperature: 230 C or below,
Flow time: 10 seconds or below,
Exposure limit
*
: None
*
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25 C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
Avoid high static voltage and electric fields, because this device is MES FET with GaAs shottky
barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese law concerned.
Keep the Japanese law concerned and so on, especially in case of removal.
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