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參數(shù)資料
| 型號： | NE76118-T2 |
| 廠商： | NEC Corp. |
| 英文描述： | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| 中文描述： | 募到S波段低噪聲放大器N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | NE76118-T2 |
DATA SHEET
GaAs MES FET
NE76118
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL GaAs MES FET
1996
Document No. P11129EJ2V0DS00 (2nd edition)
Date Published January 1997 N
Printed in Japan
DESCRIPTION
NE76118 is a n-channel GaAs MES FET housed in MOLD package.
FEATURES
Low noise figure
NF = 0.8 dB TYP. at f = 2 GHz
High associated gain
Ga = 13.5 dB TYP. at f = 2 GHz
Gate width : Wg = 400
P
m
4 pins super mini mold
Tape & reel packaging only available
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
NE76118-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 3 (Source),
Pin 4 (Drain) face to perforation side of the
tape.
NE76118-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide. Pin 1 (Source),
Pin 2 (Gate) face to perforation side of the
tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: NE76118)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
Drain to Source Voltage
Gate to Source Voltage
Gate to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GSO
V
GDO
I
D
P
tot
T
ch
T
stg
5.0
–5.0
–6.0
I
DSS
130
150
V
V
V
mA
mW
q
C
q
C
–65 to +150
PACKAGE DIMENSIONS
in millimeters
V
2.1±0.2
1.25±0.1
(
(
2
0
0
0
0
0
1
2
4
3
0
+
–
0
+
–
0
+
–
0
+
–
0
+
–
PIN CONNECTIONS
1. Source
2. Gate
3. Source
4. Drain
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