參數(shù)資料
型號(hào): NE76118
廠商: NEC Corp.
英文描述: L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
中文描述: 募到S波段低噪聲放大器N溝道砷化鎵場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 51K
代理商: NE76118
2
NE76118
RECOMMENDED OPERATING CONDITION (T
A
= 25
q
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
3
4
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
ELECTRICAL CHARACTERISTICS (T
A
= 25
q
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Gate to Source Leak Current
I
GSO
e
e
10
P
A
V
GS
=
e
5 V
Saturated Drain Current
I
DSS
30
e
100
mA
V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cut off Voltage
V
GS(off)
e
0.5
e
e
3.0
V
V
DS
= 3 V, I
D
= 100
P
A
Transconductance
gm
20
45
e
mS
V
DS
= 3 V, I
D
= 10 mA
Noise Figure
NF
0.8
dB
f = 2 GHz
Associated Gain
Ga
13.5
dB
Noise Figure
NF
0.9
1.4
dB
f = 4 GHz
Associated Gain
Ga
9.5
10.5
dB
I
DSS
rank is specified as follows.
K : 30 to 100 mA
M : 50 to 100 mA
V
DS
= 3 V
I
D
= 10 mA,
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