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參數(shù)資料
| 型號： | NE76084S |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO Ku BAND GaAs MESFET |
| 中文描述： | 低噪聲L降至Ku波段功率GaAs MESFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | NE76084S |
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
1
0.50
20
.93
15
.58
2
0.55
17
.88
31
.51
4
0.60
14
.72
69
.46
6
0.80
12
.60
107
.37
8
1.00
11
.55
131
.32
10
1.30
10
.50
163
.26
12
1.60
9
.46
-165
.21
14
1.90
8.5
.46
-135
.17
16
2.20
7.9
.44
-100
.15
18
2.50
7.3
.46
-64
.14
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5
V
GD
Gate to Drain Voltage
V
-5
V
GS
Gate to Source Voltage
V
-3
I
DS
Drain Current
mA
I
DSS
P
IN
RF Input (CW)
dBm
+15
T
CH
Channel Temperature
°
C
175
T
STG
Storage Temperature
°
C
-65 to +175
P
T
Total Power Dissipation
mW
240
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
TYPICAL NOISE PARAMETERS
1
V
DS
= 3 V, I
DS
= 10 mA
TYPICAL PERFORMANCE CURVES
(TA = 25
°
C)
N
G
A
NF
2.5
2
1.5
0
0 5 10 15 20 25
5
10
15
A
A
NOISE FIGURE AND ASSOCIATED GAIN
vs. DRAIN CURRENT
35
25
30
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
GS
= 0 V
V
GS
= -.
V
GS
= -.4 V
V
GS
= -.6 V
2 V
Drain Voltage, V
DS
(V)
D
D
Drain Current, I
DS
(mA)
Note:
1. Noise parameters include bond wires:
Gate:
2 wires total, 1 per bond pad, 0.0139" long each wire.
Drain:
2 wires total, 1 per bond pad, 0.0115" long each wire.
Sources:
4 wires total, 2 per side, 0.0066" long each wire.
Wire:
0.0007" diameter, gold.
0 25 50 75 100 125 150 175 200
300
250
200
150
100
50
0
Free Air
Infinite
Heat sink
POWER DERATING CURVE
T
T
(
Ambient Temperature, T
A
(
°
C)
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5
35
30
25
20
15
10
5
0
DC PERFORMANCE
Gate to Source Voltage, V
GS
(V)
D
D
DRAIN CURRENT vs.
GATE VOLTAGE (TYP)
NE76084S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE76100 | ACB 5C 5#16S PIN PLUG |
| NE76184A-T1 | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A-SL | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A-T1A | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE76084-SL | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084-T1A | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76100 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
| NE76100_99 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
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