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參數(shù)資料
| 型號： | NE76084S |
| 廠商： | NEC Corp. |
| 英文描述： | LOW NOISE L TO Ku BAND GaAs MESFET |
| 中文描述： | 低噪聲L降至Ku波段功率GaAs MESFET |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | NE76084S |
PART NUMBER
PACKAGE OUTLINE
NE76084S
2
84S
SYMBOLS
NF
OPT1
G
A
P
1dB
I
DSS
V
P
g
m
I
GSO
R
TH (CH-A)
PARAMETERS AND CONDITIONS
Optimum Noise Figure at V
DS
= 3 V, I
DS
= 10 mA, f = 12 GHz
Associated Gain at V
DS
= 3 V, I
DS
= 10 mA, f = 12 GHz
Output Power at 1 dB Compression, V
DS
= 3 V, I
DS
= 30 mA, f = 12 GHz
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch-off Voltage at V
DS
= 3 V, I
DS
= 0.1 mA
Transconductance, V
DS
= 3 V, I
DS
= 10 mA
Gate to Source Leakage Current, V
GS
= -4 V
Thermal Resistance (Channel to Ambient)
UNITS
dB
dB
dBm
mA
V
mS
μ
A
°
C/W
MIN
TYP
1.6
9.0
14.5
30
-0.8
40.0
1.0
MAX
1.8
8.0
15
-3.0
30.0
50
-0.5
70.0
10.0
625
FEATURES
LOW NOISE FIGURE
NF = 1.6 dB TYP at f = 12 GHz
HIGH ASSOCIATED GAIN
G
A
= 9 dB TYP at f = 12 GHz
L
G
= 0.3
μ
m, W
G
= 280
μ
m
LOW COST METAL/CERAMIC PACKAGE
ION IMPLANTATION
AVAILABLE IN TAPE & REEL
LOW NOISE
L TO Ku BAND GaAs MESFET
NE76084S
Notes:
1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a
circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-
no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
2. Package type 84S recommended for use below 13 GHz. Refer to NE76083A for use above 13 GHz.
NF
Ga
1 10 20
4
3.5
3
2.5
2
1.5
1
0.5
0
24
21
18
15
12
9
6
3
0
NOISE FIGURE AND ASSOCIATED GAIN
vs. FREQUENCY
V
DS
= 3 V, I
DS
= 10 mA
N
A
A
Frequency, f (GHz)
DESCRIPTION
The NE76084S provides a low noise figure and high associ-
ated gain through 14 GHz. The NE76084S device is fabri-
cated by ion implantation for improved RF and DC perfor-
mance, reliability, and uniformity. The device features a
recessed 0.3 micron gate and triple epitaxial technology.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
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| NE76100 | ACB 5C 5#16S PIN PLUG |
| NE76184A-T1 | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A-SL | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
| NE76184A-T1A | GENERAL PURPOSE FET N-CHANNEL GaAs MES FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE76084-SL | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76084-T1A | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| NE76100 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
| NE76100_99 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE GaAs MESFET |
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