參數(shù)資料
型號: NE76038-T1
廠商: NEC Corp.
英文描述: LOW NOISE L TO Ku-BAND GaAs MESFET
中文描述: 低噪聲L降至KU波段GaAs MESFET器件
文件頁數(shù): 2/6頁
文件大小: 40K
代理商: NE76038-T1
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
5
V
GD
Gate to Drain Voltage
V
-5
V
GS
Gate to Source Voltage
V
-3
I
DS
Drain Current
mA
I
DSS
P
IN
RF Input (CW)
dBm
+15
T
CH
Channel Temperature
°
C
150
T
STG
Storage Temperature
°
C
-65 to +150
P
T
Total Power Dissipation
mW
240
R
TH2, 3
Thermal Resistance
°
C/W
1250
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. R
TH
for plastic package mounted on glass epoxy substrate is
965
°
C/W.
3. R
TH
for chip mounted on copper heat sink is 190
°
C/W.
NE76038
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
V
DS
= 3 V, I
DS
= 10 mA
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
1
Rn/50
0.5
1.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
0.40
0.45
0.60
0.80
1.10
1.35
1.60
1.80
2.10
2.30
2.55
21.67
20.01
18.88
15.53
13.24
11.32
9.49
8.15
7.11
6.54
5.68
0.84
0.82
0.76
0.66
0.55
0.50
0.48
0.54
0.63
0.70
0.77
5
10
28
58
101
152
-166
-130
-105
-87
-75
0.79
0.75
0.70
0.61
0.50
0.40
0.31
0.25
0.20
0.15
0.12
Note:
1.
Γ
OPT
is referenced to the bend of the lead, as shown on back page.
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Ambient Temperature, T
A
(
°
C)
Drain to Source Voltage, V
DS
(V)
D
D
(
Gate to Source Voltage, V
GS
(V)
D
D
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
DS
= 3 V
T
T
-3 -2.5 -2 -1.5 -1 -0.5 0 0.5
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150 175 200
300
250
200
150
100
50
0
Free Air
Infinite
Heat Sink
50
40
30
20
10
0
0 1 2 3 4 5
V
GS
= 0 V
-0.2 V
-0.4 V
-0.6 V
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