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參數(shù)資料
| 型號： | NE68719-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數(shù)： | 9/21頁 |
| 文件大?。?/td> | 196K |
| 代理商： | NE68719-T1 |
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE687 SERIES
NE68730
V
CE
= 1.0 V, I
C
= 1.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.942
0.870
0.714
0.639
0.493
0.400
0.334
0.298
0.268
0.328
-7.800
-35.400
-65.000
-77.100
-103.600
-125.900
-147.500
-169.000
145.900
110.600
3.487
3.178
2.676
2.433
1.944
1.621
1.412
1.269
1.085
0.990
169.100
146.800
120.900
110.800
90.400
75.500
63.200
53.200
38.200
26.400
0.028
0.103
0.167
0.185
0.207
0.216
0.224
0.242
0.325
0.449
84.900
67.200
51.600
46.500
39.200
38.200
41.400
46.600
53.700
51.000
0.991
0.924
0.791
0.732
0.621
0.557
0.520
0.495
0.455
0.389
-5.800
-21.300
-36.200
-41.300
-50.400
-56.400
-61.600
-66.800
-77.900
-96.200
0.098
0.208
0.392
0.484
0.707
0.905
1.063
1.139
1.108
1.016
20.953
14.893
12.048
11.190
9.727
8.753
6.464
4.930
3.231
2.652
V
CE
= 1.0 V, I
C
= 3.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.853
0.653
0.430
0.361
0.260
0.207
0.173
0.159
0.166
0.239
-14.800
-55.800
-89.900
-102.200
-128.600
-150.800
-173.200
165.900
126.100
103.800
9.270
7.088
4.754
4.019
2.893
2.283
1.916
1.681
1.394
1.242
164.300
131.200
105.400
97.100
81.600
70.200
60.600
52.200
38.600
26.600
0.026
0.087
0.126
0.141
0.177
0.215
0.255
0.298
0.387
0.476
81.700
61.800
54.000
53.300
54.200
55.000
55.100
54.300
50.200
43.700
0.963
0.758
0.541
0.477
0.388
0.348
0.330
0.322
0.302
0.235
-11.100
-35.400
-49.200
-52.300
-56.600
-59.300
-62.000
-65.400
-74.700
-92.200
0.134
0.385
0.670
0.778
0.951
1.037
1.073
1.072
1.049
1.020
25.521
19.110
15.767
14.549
12.134
9.084
7.114
5.880
4.212
3.302
V
CE
= 1.0 V, I
C
= 10.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.590
0.314
0.184
0.155
0.119
0.100
0.098
0.099
0.121
0.193
-30.900
-84.600
-120.500
-133.700
-163.200
170.800
146.300
129.000
99.700
95.100
20.999
10.808
5.986
4.891
3.377
2.615
2.171
1.884
1.545
1.366
151.700
111.200
92.200
86.500
75.100
66.300
58.300
50.900
38.800
27.400
0.022
0.064
0.107
0.129
0.184
0.239
0.292
0.342
0.435
0.516
75.800
66.400
68.000
68.100
66.800
63.900
60.600
56.800
48.800
40.200
0.864
0.479
0.312
0.279
0.239
0.225
0.223
0.224
0.211
0.140
-21.900
-48.700
-53.100
-53.400
-53.900
-55.300
-57.600
-61.100
-72.200
-95.100
0.319
0.749
0.950
0.988
1.030
1.043
1.040
1.035
1.024
1.012
29.798
22.276
17.478
15.788
11.572
9.127
7.483
6.265
4.560
3.565
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2 V, I
C
= 3 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
22
5 GHz
S
11
5 GHz
90
270
180
225
315
135
45
0
5
S
12
0.1 GHz
S
21
5 GHz
S
12
5 GHz
S
21
0.1 GHz
0.25
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE68730 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68730-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68719-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68730 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68730-T1 | 功能描述:射頻雙極小信號晶體管 DISC BY CEL 2/02 SOT-323 NPN HI FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68733 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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