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參數(shù)資料
| 型號： | NE68719-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 表面貼裝NPN硅高頻晶體管 |
| 文件頁數(shù)： | 6/21頁 |
| 文件大?。?/td> | 196K |
| 代理商： | NE68719-T1 |
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.745
0.501
0.306
0.257
0.202
0.181
0.177
0.182
0.236
0.356
-19.300
-72.400
-114.500
-131.700
-168.800
160.000
134.700
113.100
78.300
50.600
17.318
12.131
7.399
6.113
4.245
3.252
2.655
2.269
1.820
1.530
160.600
119.600
91.300
81.600
62.300
46.200
31.300
17.600
-8.500
-35.200
0.017
0.053
0.080
0.092
0.123
0.155
0.187
0.219
0.284
0.343
74.400
57.300
48.800
46.600
40.700
34.000
26.200
17.800
-0.500
-21.000
0.942
0.677
0.471
0.419
0.354
0.326
0.315
0.305
0.257
0.175
-14.900
-44.600
-60.500
-65.300
-74.800
-84.000
-92.700
-102.300
-127.400
-178.000
0.242
0.500
0.790
0.877
0.995
1.051
1.073
1.080
1.065
1.049
30.080
23.596
19.661
18.225
15.380
11.842
9.870
8.424
6.508
5.142
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE687 SERIES
NE68718
V
CE
= 2.0 V, I
C
= 7.0 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
V
CE
= 2.0 V, I
C
= 20.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
0.491
0.259
0.174
0.160
0.158
0.163
0.169
0.173
0.228
0.349
-34.600
-102.300
-151.900
-169.400
155.900
131.600
112.200
95.000
69.700
46.900
29.872
15.243
8.321
6.748
4.599
3.497
2.843
2.416
1.929
1.611
150.600
105.900
82.800
74.700
57.900
43.300
29.400
16.300
-9.100
-35.100
0.014
0.042
0.072
0.087
0.125
0.163
0.199
0.235
0.303
0.361
74.200
63.500
59.100
56.600
48.700
39.800
30.300
20.300
0.001
-21.600
0.851
0.479
0.327
0.296
0.262
0.249
0.246
0.242
0.196
0.127
-22.900
-52.400
-62.200
-65.700
-74.300
-83.500
-92.200
-102.400
-130.200
164.300
0.370
0.781
0.966
1.004
1.040
1.053
1.057
1.058
1.044
1.035
33.291
25.598
20.628
18.526
14.437
11.911
10.084
8.648
6.752
5.346
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE68730 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68730-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68739 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68719-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68730 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68730-T1 | 功能描述:射頻雙極小信號晶體管 DISC BY CEL 2/02 SOT-323 NPN HI FREQ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68733 | 制造商:NEC 制造商全稱:NEC 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68733-T1 | 制造商:CEL 制造商全稱:CEL 功能描述:SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
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