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參數(shù)資料
| 型號： | NE685M13-T3 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NECs NPN SILICON TRANSISTOR |
| 中文描述： | 鄰舍NPN硅晶體管 |
| 文件頁數(shù)： | 7/17頁 |
| 文件大小： | 176K |
| 代理商： | NE685M13-T3 |
NE68530
V
CE
= 0.5 V, I
C
= 0.5 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
V
CE
= 1.0 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
V
CE
= 3.0 V, I
C
= 10 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
5.0
Note:
1. Gain Calculation:
|S
21
|
|S
12
|
V
CE
= 2.5 V, I
C
= 1.0 mA
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
4.0
0.764
0.414
0.224
0.181
0.112
0.090
0.086
0.090
0.098
0.119
-21.200
-54.500
-63.500
-63.500
-57.800
-42.600
-27.100
-16.300
6.000
48.700
20.910
11.575
6.493
5.306
3.640
2.805
2.314
2.002
1.619
1.441
154.700
114.900
96.100
90.300
80.700
72.600
66.400
60.500
50.800
42.600
0.020
0.052
0.091
0.109
0.157
0.202
0.250
0.292
0.379
0.464
82.600
72.800
71.000
70.500
73.300
70.700
69.600
67.100
63.200
57.500
0.910
0.590
0.457
0.433
0.396
0.389
0.392
0.389
0.374
0.307
-15.900
-31.900
-31.300
-30.900
-30.600
-32.300
-34.300
-36.400
-41.800
-49.900
0.241
0.732
0.946
0.989
1.035
1.054
1.048
1.047
1.033
1.009
30.193
23.475
18.534
16.873
12.510
10.009
8.331
7.030
5.200
4.333
0.975
0.905
0.756
0.682
0.509
0.387
0.289
0.207
0.079
-6.900
-26.200
-48.000
-57.100
-75.600
-89.500
-102.100
-114.700
-165.800
3.412
3.207
2.779
2.569
2.098
1.762
1.550
1.397
1.190
171.000
151.400
128.300
118.500
100.000
85.500
74.500
65.200
51.000
0.022
0.078
0.138
0.156
0.188
0.208
0.223
0.247
0.315
83.700
72.200
60.800
56.100
51.600
50.400
53.100
55.100
61.100
0.990
0.948
0.841
0.792
0.679
0.616
0.577
0.548
0.510
-4.700
-16.300
-28.000
-32.300
-38.900
-43.100
-45.600
-47.900
-53.000
0.106
0.220
0.410
0.506
0.727
0.909
1.042
1.118
1.133
21.906
16.140
13.040
12.166
10.476
9.279
7.169
5.439
3.557
0.986
0.900
0.735
0.651
0.463
0.339
0.258
0.219
0.220
-7.300
-28.100
-52.300
-63.100
-87.200
-109.400
-135.300
-160.300
149.000
3.516
3.231
2.766
2.541
2.070
1.735
1.517
1.358
1.143
170.100
150.600
126.000
115.400
94.800
79.200
66.600
57.100
41.200
0.025
0.098
0.167
0.190
0.228
0.248
0.265
0.285
0.341
85.700
71.400
58.000
52.900
45.400
42.300
42.400
43.800
46.700
0.993
0.939
0.812
0.747
0.609
0.521
0.458
0.419
0.377
-4.800
-18.100
-32.000
-37.300
-46.400
-52.900
-59.300
-65.400
-79.400
0.082
0.220
0.418
0.516
0.741
0.922
1.053
1.131
1.163
21.481
15.181
12.191
11.263
9.580
8.448
6.169
4.582
2.803
0.1
0.4
0.8
1.0
1.5
2.0
2.5
3.0
0.986
0.938
0.821
0.749
0.581
0.457
0.368
0.323
-6.400
-24.300
-47.300
-58.200
-82.800
-106.100
-130.100
-155.200
1.839
1.763
1.612
1.542
1.356
1.198
1.091
1.007
171.000
152.600
128.100
117.000
93.900
76.100
61.700
51.400
0.030
0.121
0.213
0.246
0.298
0.313
0.310
0.302
84.600
72.200
57.300
51.000
38.700
30.900
27.300
27.500
0.997
0.963
0.873
0.821
0.695
0.607
0.542
0.501
-4.000
-15.800
-29.300
-35.000
-46.100
-54.900
-63.100
-71.000
0.098
0.207
0.384
0.472
0.685
0.863
1.030
1.162
17.875
11.635
8.790
7.971
6.580
5.829
4.410
2.791
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE685 SERIES
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
S
11
3
2
1
S
22
0.1 GHz
0.1 GHz
S
22
4 GHz
S
11
4 GHz
90
270
180
225
315
135
45
0
3
2
1
.4
.3
.2
.1
S
12
0.1 GHz
S
21
4 GHz
S
21
0.1 GHz
S
12
4 GHz
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE685M13-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M23 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR |
| NE685M33 | 制造商:CEL 制造商全稱:CEL 功能描述:NECs NPN SILICON TRANSISTOR |
| NE685M33-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE685M33-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicon Amp Oscillatr Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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