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參數(shù)資料
| 型號： | NE680 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍NPN硅高頻晶體管 |
| 文件頁數(shù)： | 6/19頁 |
| 文件大?。?/td> | 246K |
| 代理商： | NE680 |
NE680 SERIES
TYPICAL COMMON EMITTER SCATTERING PARAMETERS
(T
A
= 25
°
C)
100
400
800
1000
1500
2000
2500
3000
.884
.729
.507
.430
.312
.259
.231
.223
-12.9
-52.2
-90.1
-105.8
-138.0
-167.5
164.8
139.5
9.246
7.715
5.509
4.722
3.398
2.645
2.189
1.876
166.6
132.3
101.2
89.8
66.8
48.2
31.5
16.9
.018
.056
.073
.087
.110
.120
.137
.165
77.7
58.5
41.2
38.3
35.6
27.1
23.2
18.5
.964
.864
.704
.657
.591
.561
.544
.539
-8.5
-27.8
-43.7
-48.3
-58.8
-69.0
-78.5
-87.7
0.19
0.34
0.63
0.71
0.88
1.07
1.15
1.13
27.1
21.4
18.8
17.3
14.9
11.8
9.7
8.4
100
400
800
1000
1500
2000
2500
3000
.972
.907
.778
.706
.561
.457
.389
.356
-9.4
-34.2
-65.1
-78.9
-111.0
-139.5
-166.6
167.0
3.605
3.315
2.897
2.678
2.173
1.800
1.545
1.358
170.2
146.5
118.1
105.8
78.7
56.6
37.3
20.7
.017
.061
.104
.114
.135
.147
.145
.150
81.6
65.5
45.6
38.1
21.4
11.8
4.8
2.4
.995
.966
.874
.841
.755
.712
.668
.651
-3.5
-20.2
-37.5
-44.3
-58.4
-70.4
-80.5
-90.6
NE68018
V
CE
= 2.5 V, I
C
= 1 mA
FREQUENCY
(MHz)
V
CE
= 2.5 V, I
C
= 3 mA
0.12
0.19
0.35
0.42
0.65
0.82
1.08
1.20
23.3
17.4
14.4
13.7
12.1
10.9
8.5
6.9
100
400
800
1000
1500
2000
2500
3000
.838
.610
.381
.314
.223
.188
.185
.173
-17.7
-61.4
-99.4
-114.8
-149.1
-178.0
153.8
129.0
13.662
10.216
6.605
5.516
3.855
2.963
2.417
2.063
163.3
124.3
94.4
83.9
63.0
45.9
30.3
16.4
.012
.037
.063
.067
.092
.112
.130
.155
80.3
61.1
48.9
47.8
43.1
34.0
33.0
23.5
.965
.819
.661
.630
.587
.569
.567
.563
-9.5
-28.3
-40.1
-43.7
-54.1
-63.6
-72.1
-82.5
V
CE
= 6 V, I
C
= 5 mA
0.13
0.42
0.73
0.85
0.97
1.07
1.10
1.10
30.6
24.4
20.2
19.2
16.2
12.6
10.8
9.3
S
11
S
21
S
12
S
22
K
MAG
1
(dB)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
Coordinates in Ohms
Frequency in GHz
(V
CE
= 2.5 V, I
C
= 1 mA)
20
10
5
4
3
2
1.5
1
.8
.6
.4
.2
-.2
-.4
-.6
-.8
-1
-1.5
-2
-3
-4
-5
-10
-20
0
20
10
1.5
.8
.6
.4
.2
5
4
3
2
1
S
22
0.1 GHz
S
11
0.1 GHz
S
22
3 GHz
S
11
3 GHz
90
270
180
225
315
135
45
0
2.5
0.1
0.2
S
12
0.1 GHz
S
21
3 GHz
S
21
0.1 GHz
S
12
3 GHz
Note:
1.Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
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|---|---|
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| NE68030-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE68000 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68018 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-T1 | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE68018-T1-A | 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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