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參數(shù)資料
| 型號(hào)： | NE570DG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 模擬運(yùn)算功能 |
| 英文描述： | Compandor |
| 中文描述： | DUAL COMPANDER, 0.02 MHz BAND WIDTH, PDSO16 |
| 封裝： | 7.5 MM, LEADFREE, PLASTIC, SOIC-16 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | NE570DG |
NE570
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin
Symbol
Description
1
RECT CAP 1
External Capacitor Pinout for Rectifier 1
2
RECT IN 1
Rectifier 1 Input
3
G CELL IN 1
Variable Gain Cell 1 Input
4
GND
Ground
5
INV. IN 1
Inverted Input 1
6
RES. R3 1
R3 Pinout 1
7
OUTPUT 1
Output 1
8
THD TRIM 1
Total Harmonic Distortion Trim 1
9
THD TRIM 2
Total Harmonic Distortion Trim 2
10
OUTPUT 2
Output 2
11
RES. R3 2
R3 Pinout 2
12
INV. IN 2
Inverted Input 2
13
V
CC
Positive Power Supply
14
G CELL IN 2
Variable Gain Cell 2 Input
15
RECT IN 2
Rectifier 2 Input
16
RECT CAP 2
External Capacitor Pinout for Rectifier 2
ELECTRICAL CHARACTERISTICS
V
CC
= +15 V, T
A
= 25
°
C; unless otherwise stated.
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
Supply Voltage
V
CC
6.0
24
V
Supply Current
No Signal
I
CC
4.3
4.8
mA
Output Current Capability
I
OUT
±
20
mA
Output Slew Rate
SR
±
0.5
V/ s
Gain Cell Distortion (Note 1)
Untrimmed
0.3
1.0
%
Trimmed
0.05
%
Resistor Tolerance
±
5
±
15
%
Internal Reference Voltage
1.7
1.8
1.9
V
Output DC Shift (Note 2)
Untrimmed
±
90
±
150
mV
Expandor Output Noise
No signal, 15 Hz to 20 kHz
(Note 3)
20
45
V
Unity Gain Level (Note 4)
1.0
0
+1.0
dBm
Gain Change (Notes 1 and 5)
T
A
= 0
°
C to +70
°
C
±
0.1
±
0.2
dB
Reference Drift (Note 5)
T
A
= 0
°
C to +70
°
C
±
5.0
±
10
mV
Resistor Drift (Note 5)
T
A
= 0
°
C to +70
°
C
+8.0, 5.0
%
Tracking Error (measured relative to value at unity gain)
equals [V
O
V
O
(unity gain)] dB V
2
dBm
Rectifier Input V
= +6.0 V
V
2
= +6.0 dBm, V
1
= 0 dB
V
2
= 30 dBm, V
1
= 0 dB
±
0.2
+0.2
0.5, +1.0
dB
dB
Channel Separation
60
dB
1. Measured at 0 dBm, 1.0 kHz.
2. Expandor AC input change from no signal to 0 dBm.
3. Input to V
1
and V
2
grounded.
4. 0 dB = 775 mV
RMS
.
5. Relative to value at T
A
= 25
°
C.
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