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參數資料
| 型號： | NE434S01 |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Amplifier N-Channel HJ-FET(低噪聲放大器N溝道結型場效應管) |
| 中文描述： | 低噪聲放大器N溝道黃建忠場效應管（低噪聲放大器?溝道結型場效應管） |
| 文件頁數： | 9/12頁 |
| 文件大小： | 77K |
| 代理商： | NE434S01 |
9
NE434S01
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different
conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E)
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230
q
C or below, Reflow time: 30
seconds or below (210
q
C or higher), Number of reflow process: 1,
Exposure limit
*
: None
IR30-00
Partial heating method
Terminal temperature: 230
q
C or below, Flow time: 10 seconds or below,
Exposure limit
*
: None
*
:
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25
q
C and relative humidity at 65 % or less.
Note
: Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
:
Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor
with shottky barrier gate.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE434S01_98 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE HJ FET |
| NE434S01-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE434S01-T1B | 功能描述:MOSFET S01 LO NO HJ FET S01 LO NO HJ FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE45 | 制造商:D&R Associates 功能描述: 制造商:CM 功能描述: |
| NE-45 | 制造商:VISUAL COMMUNICATIONS COMPANY LLC 功能描述:NE-45 /Refer New Part # B7A |
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