參數(shù)資料
型號(hào)： NE25339
廠商： NEC Corp.
英文描述： GENERAL PURPOSE DUAL-GATE GaAs MESFET
中文描述： 一般用途的雙柵GaAs MESFET
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 48K
代理商： NE25339
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
I
I
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
Gate 2 to Source Voltage, V
G2S
(V)
Gate 2 to Source Voltage, V
G2S
(V)
P
P
Drain Current, I
D
(mA)
TEST CIRCUIT DIAGRAM
900 MHz G
PS
and NF TEST CIRCUIT
N
P
P
N
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE25339
1000pF
V
G2S
(1 V)
UP TO 10 pF
OUTPUT
50
L
1
, L
2
, 35 X 5 X 0.2 mm
V
DD
(5 V)
V
G1S
1000pF
RFC
1000pF
L2
UP TO
10 pF
G
2
G
1
1000 pF
UP TO
10 pF
L
1
UP TO 10 pF
47 k
INPUT
50
Note: I
DS
= 10 mA
47 k
D
S
25
20
15
10
5
0
0
5
0 5 10
G
PS
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
NF
10
30
15
0
-15
-30
-45
-3.0 -2.0 -1.0 0 +1.0 +2.0
NF
G
PS
10
0
5
2.0
1.0
0
-1.0
0
+1.0
V
G1S
= 1 V at I
D
= mA
V
DS
= 5 V
f = 1 kHz
V
G1S
= 1 V at I
D
= 5 mA
相關(guān)PDF資料
PDF描述
NE25339-T1 GENERAL PURPOSE DUAL-GATE GaAs MESFET
NE3002-VA10A Near edge thermal printhead (300 dots / inch)
NE3004-VA10A Near edge thermal printhead (300 dots / inch)
NE32000 LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
NE32083A LOW COSET LOW NOISE K-BAND HETERO JUNCTION FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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