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參數(shù)資料
| 型號： | NE25139T1U72 |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| 中文描述： | 一般用途的雙柵GaAs MESFET |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 54K |
| 代理商： | NE25139T1U72 |
K
S
21
(dB)
MAG
1
(dB)
Note:
1. Gain Calculations:
|S
21
|
|S
12
|
MAG = Maximum Available Gain, MSG = Maximum Stable Gain
PART
NUMBER
AVAILABILITY
I
DSS
RANGE
(mA)
MARKING
NE25139
NE25139-T1
NE25139U71
NE25139T1U71
NE25139U72
NE25139T1U72
NE25139U73
NE25139T1U73
NE25139U74
NE25139T1U74
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
Bulk up to 3K
3K/Reel
5 - 40
5 - 40
5 - 15
5 - 15
10 - 25
10 - 25
20 - 35
20 - 35
30 - 40
30 - 40
U71
U71
U72
U72
U73
U73
U74
U74
ORDERING INFORMATION
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 39
(SOT-143)
2.8 -0.3
1.5 -0.1
NE25139
V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA
FREQUENCY
Coordinates in Ohms
Frequency in GHz
(V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA)
TYPICAL COMMON SOURCE SCATTERING PARAMETERS
(T
A
= 25
°
C)
S
11
S
21
S
12
S
22
(GHz)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
MAG
.99
.99
.99
.98
.97
.97
.96
.95
.94
.92
.91
.88
ANG
-3
-7
-9
-13
-16
-19
-22
-25
-29
-29
-35
-35
MAG
2.36
2.39
2.31
2.23
2.42
2.30
2.33
2.23
2.45
2.30
2.35
2.37
ANG
177
169
164
160
158
150
146
142
137
131
126
124
MAG
.001
.001
.002
.002
.003
.003
.004
.005
.005
.006
.006
.006
ANG
87
85
82
82
81
81
80
79
79
78
78
78
MAG
.97
.98
.98
.97
.99
.96
.99
.96
.99
.97
.98
.99
ANG
-1
-3
-3
-6
-6
-8
-9
-9
-13
-11
-15
-13
0.47
0.51
0.70
1.14
1.18
1.49
2.03
2.21
1.34
0.32
0.04
0.07
5.83
5.7
5.6
5.6
5.6
5.6
5.5
3.6
3.0
2.9
2.1
1.6
2.9
32.8
32.8
27.5
24.2
22.6
19.2
16.6
17.2
17.8
15.1
14.6
MAG =
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
NE25139
+0.10
-0.05
(LEADS 2, 3, 4)
0.6 -0.05
0.16-0.06
5
5
0.8
1.1 -0.1
1
2
3
0 to 0.1
4
0.4
2.9
±
0.2
0.95
0.85
1.9
Note: All dimensions are typical unless otherwise specified.
PIN
CONNECTIONS
1. Source
2. Drain
3. Gate 2
4. Gate 1
j250
j150
j100
j50
j25
j10
0
-j10
-j25
-j50
-j100
-j150
-j250
S11
.1 GHz
S22
.1 GHz
S22
4 GHz
S11
4 GHz
10
25
50
100 150 250
+90
+60
+30
+120
+150
-150
-120
-90
-60
-30
0
+180
–
S21
1.2 GHz
S21
.25
1.0
1.5
2.0
2.5
.20
.15
.10
.5
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
(408) 988-3500
Telex 34-6393
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
8/98
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE25139T1U73 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139T1U74 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139U71 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139U72 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139U73 | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE25139-T1-U72 | 功能描述:MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE25139T1U73 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139-T1-U73 | 功能描述:FET 900 MHZ SOT-143 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| NE25139T1U74 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
| NE25139U71 | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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