參數(shù)資料
型號: NDS9407
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: Single P-Channel Enhancement Mode Field Effect Transistor
中文描述: 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SO-8
文件頁數(shù): 2/10頁
文件大小: 325K
代理商: NDS9407
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -48 V, V
GS
= 0 V
-1
μA
T
A
= 55°C
-10
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-1
-2.3
V
T
A
= 125°C
-0.8
-1.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -3.0 A
0.08
0.15
T
A
= 125°C
0.13
0.3
V
GS
= -4.5 V, I
D
= -1.6 A
0.135
0.24
T
A
= 125°C
0.2
0.48
I
D(on)
On-State Drain Current
V
GS
= -10 V, V
DS
= -5 V
-12
A
g
FS
Forward Transconductance
V
DS
= -15 V, I
D
= -3.0 A
6.8
S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= -30 V, V
GS
= 0 V,
f = 1.0 MHz
1400
pF
C
oss
Output Capacitance
290
pF
C
rss
Reverse Transfer Capacitance
80
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -25 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
12
30
ns
t
r
Turn - On Rise Time
12
40
ns
t
D(off)
Turn - Off Delay Time
55
100
ns
t
f
Turn - Off Fall Time
22
45
ns
Q
g
Total Gate Charge
V
DS
= -30 V,
I
D
= -3.0 A, V
GS
= -10 V
37
50
nC
Q
gs
Gate-Source Charge
4
nC
Q
gd
Gate-Drain Charge
10
nC
NDS9407.SAM Rev. B
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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