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參數(shù)資料
| 型號： | NDS8934 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.8 A, 20 V, 0.07 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 77K |
| 代理商： | NDS8934 |
NDS8934.SAM
0
0.1
2oz COPPER MOUNTING PAD AREA (in )
0.2
0.3
0.4
2
0.5
2
2.5
3
3.5
4
4.5
-
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -4.5V
o
Figure 13. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
0.1
0.2
0.5
1
2
5
10
20
30
0.01
0.03
0.1
0.3
1
3
10
30
- V , DRAIN-SOURCE VOLTAGE (V)
-
D
RDS(ON) LIMIT
100ms
10ms
1s
10s
DC
100us
V = -4.5V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 14. Maximum Safe Operating Area.
Typical Thermal Characteristics
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Power for Single Operation
Total Power for Dual Operation
1a
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
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PDF描述 |
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| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8947 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8958 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8961 | Dual N-Channel Enhancement Mode Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8936 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8936 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS8947 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8947 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8 |
| NDS8947_Q | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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