- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363244 > NDS8934 (FAIRCHILD SEMICONDUCTOR CORP) Dual P-Channel Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | NDS8934 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 3.8 A, 20 V, 0.07 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 77K |
| 代理商： | NDS8934 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
V
DS
= -16 V, V
GS
= 0 V
V
DS
= -10 V, V
GS
= 0 V, T
J
= 70°C
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
-20
V
Zero Gate Voltage Drain Current
-1
μA
-5
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-0.5
-0.7
-1
V
T
J
= 125°C
-0.3
-0.5
-0.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -4.5 V, I
D
= -3.8 A
0.06
0.07
T
J
= 125°C
0.085
0.14
V
GS
= -2.7 V, I
D
= -3.2 A
V
GS
= -4.5 V, V
DS
= -5 V
V
GS
= -2.7 V, V
DS
= -5 V
V
DS
= 10 V, I
D
= -3.8 A
0.082
0.1
I
D(on)
On-State Drain Current
-15
A
-5
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
9
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
1120
pF
Output Capacitance
470
pF
Reverse Transfer Capacitance
145
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -5 V, I
D
= -1 A,
V
GEN
= -4.5 V, R
GEN
= 6
13
20
ns
Turn - On Rise Time
53
70
ns
Turn - Off Delay Time
60
80
ns
Turn - Off Fall Time
33
40
ns
Total Gate Charge
V
= -10 V,
I
D
= -3.8 A, V
GS
= -4.5 V
19
30
nC
Gate-Source Charge
2.4
nC
Gate-Drain Charge
5.5
nC
NDS8934.SAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDS8936 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS8947 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| NDS8958 | Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDS8961 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| NDS9400 | Single P-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDS8936 | 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8936 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN LOGIC SO-8 |
| NDS8947 | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDS8947 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8 |
| NDS8947_Q | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。