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參數(shù)資料
| 型號(hào)： | NDP710B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 40 A, 100 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 74K |
| 代理商： | NDP710B |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 50 V, I
D
= 42 A,
V
GS
= 10 V, R
GEN
= 5
ALL
ALL
15
111
25
180
nS
nS
Turn - On Rise Time
ALL
ALL
55
81
90
130
nS
nS
Turn - Off Fall Time
V
= 80 V,
I
D
= 42 A, V
GS
= 10V
ALL
ALL
ALL
92
15
44
130
nC
nC
nC
NDP710A
NDP710AE
NDB710A
NDB710AE
NDP710B
NDP710BE
NDB710B
NDB710BE
NDP710A
NDP710AE
NDB710A
NDB710AE
NDP710B
NDP710BE
NDB710B
NDB710BE
ALL
42
A
40
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
168
A
160
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 21 A
0.89
0.69
128
1.3
1.2
180
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 42 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
8.7
13
A
R
θ
JC
R
θ
JA
Notes:
1. NDP710A/710B and NDB710A/710B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
1
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP710.SAM
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