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參數(shù)資料
| 型號： | NDP708BE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 54 A, 80 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 74K |
| 代理商： | NDP708BE |
NDP708.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
2
10
50
100
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
V = 0V
TJ
25°C
-55°C
0
40
80
120
160
0
5
10
15
20
Q , GATE CHARGE (nC)
V
G
I = 60A
V = 12V
64
24
1
2
3
5
10
20
30
50
100
500
1000
2000
3000
5000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature
.
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics.
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms
.
Typical Electrical Characteristics
(continued)
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| NDP710A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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