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參數(shù)資料
| 型號： | NDP6060L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 360K |
| 代理商： | NDP6060L |
April 1996
NDP6060L / NDB6060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP6060L
NDB6060L
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 16
V
- Nonrepetitive (t
P
< 50 μs)
- Continuous
± 25
I
D
Drain Current
48
A
- Pulsed
144
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
100
W
0.67
W/
°
C
T
J
,T
STG
Operating and Storage Temperature
-65 to 175
°C
T
L
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
275
°C
NDP6060L Rev. D / NDB6060L Rev. E
These logic level N-Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients are
needed.
48A, 60V. R
DS(ON)
= 0.025
@ V
GS
= 5V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N LOGIC TO-220 |
| NDP606A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP606B | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP608A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP608AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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