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參數(shù)資料
| 型號(hào)： | NDP6050 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流48A, 漏源電壓50V，導(dǎo)通電阻0.025Ω）) |
| 中文描述： | 48 A, 50 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | NDP6050 |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 48 A
200
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
48
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 50 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
2.9
4
V
T
J
= 125°C
1.4
2.3
3.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 24 A
0.02
0.025
T
J
= 125°C
0.032
0.04
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
48
A
Forward Transconductance
10
19
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1190
1800
pF
475
800
pF
150
400
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 10 V, R
GEN
= 7.5
10
20
nS
t
r
t
D(off)
Turn - On Rise Time
145
300
nS
Turn - Off Delay Time
28
60
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
77
150
nS
Total Gate Charge
V
= 48 V,
I
D
= 48 A, V
GS
= 10V
39
70
nC
Gate-Source Charge
7.6
Gate-Drain Charge
22
NDP6050 Rev. A1 / NDB6050 Rev. B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB608A | N-Channel Enhancement Mode Field Effect Transistor（36A，80V，0.042Ω）(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管（漏電流36A, 漏源電壓80V，導(dǎo)通電阻0.042Ω）) |
| NDP608A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP608BE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP6050L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP6051 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP6051L | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP605A | 制造商:Texas Instruments 功能描述: |
| NDP605B | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
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