參數(shù)資料
型號(hào): NDP603AL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 25 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 5/5頁
文件大?。?/td> 65K
代理商: NDP603AL
NDP603AL.SAM
0
10
20
30
40
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g
J
25°C
F
V = 10V
125°C
0.1
0.5
V , DRAIN-SOURCE VOLTAGE(V)
1
2
5
10
30
50
0.5
1
2
5
10
20
50
100
150
I
D
V = 20V
SINGLE PULSE
T = 25°C
RDS(ON)Lmt
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
1000
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.2
Duty Cycle, D = t /t
2
R (t) = r(t) * R
R = 2.5 °C/W
T - T = P * R (t)
P(pk)
t
1
t
2
r
0.01
Figure 13. Transconductance Variation with Drain
Current and Temperature
Figure 15. Maximum Safe Operating Area
Figure 16. Transient Thermal Response Curve
Typical Electrical Characteristics
(continued)
Figure 14. Body Diode Forward Voltage
Variation with Current and Temperature
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0.1
0.2
0.5
1
2
5
10
20
40
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
V = 0V
J
25°C
-55°C
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