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參數(shù)資料
| 型號： | NDP5060L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 358K |
| 代理商： | NDP5060L |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 30 V, I
D
= 26 A
100
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
26
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 60 V, V
GS
= 0 V
60
V
Zero Gate Voltage Drain Current
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.4
2
V
T
J
= 125°C
0.65
1
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 13 A
0.042
0.05
T
J
= 125°C
0.07
0.08
V
GS
= 10 V, I
D
= 13 A
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 13 A
0.031
0.035
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
26
A
Forward Transconductance
16
S
V
= 30 V, V
GS
= 0 V,
f = 1.0 MHz
840
pF
230
pF
75
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 26 A,
V
GS
= 5 V, R
GEN
= 30
R
GS
= 30
13
20
nS
t
r
t
D(off)
Turn - On Rise Time
200
400
nS
Turn - Off Delay Time
45
80
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
102
200
nS
Total Gate Charge
V
= 24 V,
I
D
= 26 A, V
GS
= 5 V
17
24
nC
Gate-Source Charge
4
nC
Gate-Drain Charge
10
nC
NDP5060L Rev.A
相關PDF資料 |
PDF描述 |
|---|---|
| NDB5060 | N-Channel Enhancement Mode Field Effect Transistor（26A,60V，0.05Ω）(N溝道增強型MOS場效應管（漏電流26A, 漏源電壓60V，導通電阻0.05Ω）) |
| NDP5060 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB508A | N-Channel Enhancement Mode Field Effect Transistor（19A,80V，0.08Ω）(N溝道增強型MOS場效應管（漏電流19A, 漏源電壓80V，導通電阻0.08Ω）) |
| NDP508A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP508AE | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDP508A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP508AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP508B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP508BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP510A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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